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ASDL-5270
High-Performance Photodiode in T-3/4 Package
Data Sheet
Description
ASDL-5270 is a Silicon PIN Photodiode encapsulated in dark T-13/4 package. The added feature of a dark tint acts as an optical filter to reduce effects of ambient light from interfering with the Infrared signal. It is ideal for applications from 700nm to 1100nm that require high sensitivity with low dark current and fast response time.
Features
* T-13/4 package * Fast Response Time * Low Dark Current * High Sensitivity * Low junction capacitance * Wide Viewing Angle * Lead Free & ROHS Compliant * Available in Tape & Reel
Applications
* Photo-Interrupters * High Speed IR data communication * Industrial Electronics & Equipment * Consumer Electronics (Optical Mouse, Remote Control, Printer etc)
Ordering Information
Part Number ASDL-570-D ASDL-570-D3 Lead Form Straight Color Dark Packaging Tape & Reel Bulk Shipping Option 4000 8000pcs / Carton
Package Dimensions
Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is + 0.25mm (.010") unless otherwise noted 3. Protruded resin under flange is 1.5mm (.059") max 4. Lead spacing is measured where leads emerge from package 5. Specifications are subject to change without notice.
Absolute Maximum Ratings at TA=25C
Parameter Power Dissipation Reverse Voltage (Ir=00uA) Operating Temperature Storage Temperature Junction temperature Lead Soldering Temperature [ .6mm (0.063") From Body ] Symbol PDISS VR TO TS TJ 60C for 5 seconds -40 -55 Min. Max 50 30 85 00 0 Unit mW V C C C
Electrical Characteristics at 25C
Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode Capacitance Symbol VF VBR ID CO 5 30 30 Min. Typ. Max. .3 Unit V V nA pF Condition IF = 50mA IR= 00uA Ee = 0mW/cm VR=0V Ee=0mW/cm Vr = 3V F = MHZ Ee = 0mW/cm l = 940nm Ee=0.5mW/cm
Open Circuit Voltage Thermal Resistance, Junction to Pin
VOC RqJP -
350 375
mV C/W
Optical Characteristics at 25C
Parameter Photocurrent Symbol IPH Min. 8 Typ. 3 Max. Unit uA Condition Ee = 0.mW/cm l = 940nm Vr = 5V l = 940nm Vr = 5V
Radiant Sensitive Area Absolute Spectral Sensitivity Viewing Angle Wavelength of Peak sensitivity Spectral BandWidth Rise Time
A S q/ lPK l tr 700
.55 0.6 60 900 900 50 00
mm A/W Deg nm nm ns VR = 0V l = 850nm RL = K W VR = 0V l = 850nm RL = K W
Fall Time
tf
50
ns
3
Typical Electrical/Optical Characteristics Curves (TA=25C unless otherwise indicated)
pA 4000 100 pF
3000
Dark Current ID Capacitance Ct
80
60
2000
40
1000
20
0
0
5
10
15
20 V
0
10
-2
10
-1
10
0
10
1
10 V
2
Reverse Voltage VR
Reverse Voltage VR
Figure 1. DARK CURRENT VS. REVERSE VOLTAGE TA=25C, Ee=0 mW/cm
2
Figure 2. CAPACITANCE VS. REVERSE VOLTAGE 2 F=1MHZ; Ee=0mW/cm
nA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10
-1
103
10
Dark Current ID
2
Is amb
Is 25
o
Photocurrent
10
1
10
0
-20
0
20
40
60
80 C
o
0
20
40
60
80
100 C
o
Ambient Temperature
Ambient Temperature
Figure 3. PHOTOCURRENT VS. AMBIENT TEMPERATURE
Figure 4. DARK CURRENT AMBIENT TEMPERATURE VR=10, Ee=0mW/cm 2
4
Typical Electrical/Optical Characteristics Curves (TA=25C unless otherwise indicated) Cont.
100 % 10
3
uA
Relative Spectral Sensitivity
80 10 60
Photocurrent Ip
2
10
1
40
20
10
0
0 700 800 900 1000 1100 Wavelength
10
-1
10
-2
10
-1
10
0
10
1
mW 2 CM
Irradiance Ee
Figure 5. RELATIVE SPECTRAL SENSITIVITY VS WAVELENGTH
Figure 6. PHOTOCURRENT VS IRRADIANCE = 940 nm
0
o
10
o
20
o
175
Total Power Dissipation mW
o
Relative Sensitivity
30 1.0 0.9 0.8 0.7 0.6 40 50 60 80 0.5 0.3 0 0.2 0.4
o
125
o
o
75
o
o
25 0 -40 -20
o
100
0
20 40 60 80 100 C
Ambient Temperature
Figure 7. SENSITIVITY DIAGRAM
Figure 8. TOTAL POWER DISSIPATION VS AMBIENT TEMPERATURE
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright (c) 007 Avago Technologies Limited. All rights reserved. AV0-000EN - January 8, 007

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